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| (R) STGB10NB37LZ N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESHTM IGBT TYPE STGB10NB37LZ s s s s s s V CES CLAMPED V CE(s at) < 1.8 V IC 10 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4") 3 1 DESCRIPTION Using the latest high voltage technology based on patented strip layout, SGS-Thomson has designed an advanced family of IGBTs with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. APPLICATIONS AUTOMOTIVE IGNITION D2PAK TO-263 INTERNAL SCHEMATIC DIAGRAM s ABSOLUTE MAXIMUM RATINGS Symb ol V CES V ECR V GE IC IC I CM (*) P tot E SD T s tg Tj June 1999 Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor ESD (Human Body Model) Storage T emperature Max. Operating Junction Temperature o o o Value CLAMPED 18 CLAMPED 20 20 60 125 0.83 4 -65 to 175 175 Un it V V V A A A W W /o C KV o o C C 1/8 (*) Pulse width limited by safe operating area STGB10NB37LZ THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp 1.2 62.5 0.2 o o C/W C/W o C/W ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbo l BV (CES) BV (ECR) BV GE I CES IGES R GE Parameter Clamped Voltage Emitter Collector Break-down Voltage Gate Emitter Break-down Voltage Collector cut-off Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Emitter Resistance Test Con ditions I C = 2 mA T j = - 40 to 150 o C I C = 75 mA T j = - 40 to 150 o C I C = 2 mA j = - 40 to 150 o C V CE = 15 V V CE = 200 V V GE = 10 V V GE = 0 V GE = 0 Tj = 150 oC o T j = 150 C V CE = 0 20 V GE = 0 V GE = 0 Min. 375 18 12 16 10 100 0.7 Typ. 400 Max. 425 Unit V V V A A mA K ON () Symbo l V GE(th) V CE(SAT ) IC Parameter Gate Threshold Voltage Collector-Emitt er Saturation Voltage Collector Current Test Con ditions V CE = V GE IC = 250 A T j = - 40 to 150 o C V GE = 4.5 V V GE = 4.5 V V GE = 4.5 V IC = 10 A IC = 10 A T j = 25 o C o T j = - 40 C V CE = 9 V 20 Min. 0.6 1.2 1.3 Typ. Max. 2.4 1.8 Unit V V V A DYNAMIC Symbo l gf s C i es C o es C res QG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Test Con ditions V CE = 25 V V CE = 25 V f = 1 MHz I C = 10 A V GE = 0 Min. 10 Typ. 18 1250 103 18 28 1700 140 25 Max. Unit S pF pF pF nC V CE = 320 V IC = 10 A V GE = 5 V 2/8 STGB10NB37LZ FUNCTIONAL CHARACTERISTICS Symbo l II U.I. S. Parameter Latching Current Unclamped Inductive Switching Current Functional Test Single Pulse Avalanche Energy Reverse Avalanche Energy Test Con ditions V CLAMP = 320 V R GOF F = 1 K V GE = 5 V T C = 125 o C Min. 20 15 12 215 150 10 Typ. Max. Unit A A A mJ mJ mJ R GOF F=1 K L =200 H Tj = 125 o C R GOF F=1 K L =3 mH T start = 55 o C T start = 55 o C T start = 150 o C T c = 125 oC duty cycle < 1% pulse width limited by t jmax E AS E AR ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l t d(on) tr (di/dt) on Eo n Parameter Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Con ditions V CC = 320 V V GE = 5 V V CC = 320 V R G = 1 K I C = 10 A R G = 1 K I C = 10 A V GE = 5 V Min. Typ. 520 340 17 180 Max. Unit ns ns A/s J SWITCHING OFF Symbo l tc t r (v off ) tf td (o ff ) E o ff(**) tc t r (v off ) tf td (o ff ) E o ff(**) Parameter Test Con ditions I C = 10 A V GE = 5 V Min. Typ. 4 2.2 1.5 14.8 4.0 5.2 2.8 2 15.8 6.5 Max. Unit s s s s mJ s s s s mJ Cross-O ver Time V CLAMP = 320 V Off Voltage Rise Time R GE = 1 K Fall T ime Off Voltage Delay Time Turn-off Switching Loss Cross-O ver Time V CLAMP = 320 V Off Voltage Rise Time R GE = 1 K Fall T ime o Off Voltage Delay Time T j = 125 C Turn-off Switching Loss I C = 10 A V GE = 5 V (*) Pulse width limited by safe operating area (*) Pulsed: Pulse duration = 300 ms, duty cycle 1.5 % (**)Losses Include Also The Tail (jedec Standardization) Safe Operating Area Thermal Impedance 3/8 STGB10NB37LZ Output Characteristics Transfer Characteristics Normalized Gate Threshold Voltage vs Temperature Transconductance Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Gate-Emitter Voltage 4/8 STGB10NB37LZ Capacitance Variations Gate Charge vs Gate-Emitter Voltage Off Losses vs Gate Resistance Off Losses vs Collector Current Break-down Voltage vs Temperature Clamping Voltage vs Gate Resistance 5/8 STGB10NB37LZ Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And DIode Recovery Times 6/8 STGB10NB37LZ TO-263 (D2PAK) MECHANICAL DATA mm MIN. A A1 B B2 C C2 D E G L L2 L3 4.4 2.49 0.7 1.14 0.45 1.21 8.95 10 4.88 15 1.27 1.4 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 10.4 5.28 15.85 1.4 1.75 MIN. 0.173 0.098 0.027 0.044 0.017 0.047 0.352 0.393 0.192 0.590 0.050 0.055 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.409 0.208 0.624 0.055 0.068 DIM. D A C A2 DETAIL "A" A1 B2 B G C2 DETAIL"A" E L2 L L3 P011P6/E 7/8 STGB10NB37LZ Information furnished is believed to be accurate and reliable. However, STMicroelect onics assumes no responsibil ity for the consequences r of use of such information nor for any infringement of patents or other rights of third partes which may result from its use. No license is i granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all informaton previously supplied. STMicroelectronics products i are not authorized for use as critical components in life support devices or systems with express written approval of STMicroelectronics. out The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japa - Malaysia - Malta - Morocco n Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 8/8 http://www.st.com . |
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